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RB500V-40

Taiwan Semiconductor

Low VF SMD Schottky Barrier Diode

Small Signal Product Low VF SMD Schottky Barrier Diode FEATURES - Low power loss, high current capability, low VF - Su...


Taiwan Semiconductor

RB500V-40

File Download Download RB500V-40 Datasheet


Description
Small Signal Product Low VF SMD Schottky Barrier Diode FEATURES - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level (MSL): 1 - Packing code with suffix "G" means green compound (halogen-free) SOD-323F RB500V-40 Taiwan Semiconductor MECHANICAL DATA - Case: Flat lead SOD-323F small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed : 260°C/10s - Polarity: Indicated by cathode band - Weight: 4.85 ± 0.5 mg - Marking Code: S9 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL VALUE Power Dissipation PD 200 Peak Reverse Voltage VRM 45 Reverse Voltage VR 40 Mean Forward Current IO 0.1 Non-Repetitive Peak Forward Surge Current 60Hz for 1 Cyc. IFSM 1.0 Thermal Resistance (Junction to Ambient) (Note) RθJA 500 Junction and Storage Temperature Range TJ ,TSTG -40 to +125 PARAMETER Reverse Breakdown Voltage IR = 100 μA Forward Voltage IF = 10 mA Reverse Leakage Current VR = 10 V Junction Capacitance VR = 10V , f = 1.0 MHz Note: Valid provided that electrodes are kept at ambient temeprature. SYMBOL V(BR) VF IR CJ MIN 45 - MAX - 0.45 1 6.0 UNIT mW V V A A oC/W oC UNIT V V μA pF Document Number: DS_S1412013 Version: C14 Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) IO, Average Rectified Current (mA) 120 ...




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