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MS9N90 Dataheets PDF



Part Number MS9N90
Manufacturers Bruckewell
Logo Bruckewell
Description N-Channel MOSFET
Datasheet MS9N90 DatasheetMS9N90 Datasheet (PDF)

MS9N90 900V N-Channel MOSFET Description The MS9N90 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • RDS(on) (Max 1.4 Ω )@VGS=10V • Gate Charge (Typical 47nC) • Improved dv/dt Capability, High Ruggedness • 100% Avalanche Tested • Maximum Junction Temperature Range (150°C) • .

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MS9N90 900V N-Channel MOSFET Description The MS9N90 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • RDS(on) (Max 1.4 Ω )@VGS=10V • Gate Charge (Typical 47nC) • Improved dv/dt Capability, High Ruggedness • 100% Avalanche Tested • Maximum Junction Temperature Range (150°C) • RoHS compliant package Application • Adapter • Switching Mode Power Supply Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter VDSS Drain-Source Voltage VGS Gate-Source Voltage Drain Current -Continuous (TC=25°C) ID Drain Current -Continuous (TC=100°C) IDM Drain Current -Pulsed EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dV/dt Peak Diode Recovery dV/dt Power Dissipation (TC=25°C) PD - Derate above 25C TJ/TSTG Operating Junction and Storage Temperature Value 900 ±30 9 6 36 900 28 4.0 280 2.22 -55 to +150 Unit V V A A A mJ mJ V/ns W W/°C °C Publication Order Number: [MS12N60] © Bruckewell Technology Corporation Rev. A -2014 MS9N90 900V N-Channel MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter Maximum lead temperature for soldering purposes, TL 1/8'' from case for 5 seconds • Drain current limited by maximum junction temperature Value 300 Unit °C Thermal Resistance Characteristics Symbol Parameter RθJC Junction-to-Case RθJA Junction-to-Ambient Typ. Max. Units -- 0.75 °C/W -- 62.5 On Characteristics Symbol Parameter VGS Gate Threshold Voltage *RDS(ON) Static Drain-Source On-Resistance Test Conditions VDS = VGS, ID = 250μA VGS = 10 V , ID = 4.5 A Min Typ. Max. Units 3.0 5.0 V -- 1.10 1.40 Ω Off Characteristics Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS /△TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSSF IGSSR Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Test Conditions VGS = 0 V , ID = 250μA ID = 250μA, Referenced to 25°C VDS = 900 V , VGS = 0 V VDS = 720 V , VC = 125°C VDS = 30 V, VDS = 0 V VDS = -30 V, VDS = 0 V Min Typ. Max. Units 900 -- -- V -- 1.05 -- V/°C -- -- 10 μA 100 -- -- 100 μA -- -- -100 nA Dynamic Characteristics Symbol Parameter CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance Test Conditions Min Typ. Max. Units -- 2200 -- pF VDS = 25 V, VGS = 0 V, -- 180 -- pF f = 1.0MHz -- 15 -- pF Publication Order Number: [MS12N60] © Bruckewell Technology Corporation Rev. A -2014 MS9N90 900V N-Channel MOSFET Dynamic Characteristics Symbol Parameter td(on) Turn-On Time tr Turn-On Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions VDS = 450 V, ID = 9 A, RG = 25 Ω VDS = 720 V,ID = 10 A, VGS= 9 V Min -------- Source-Drain Diode Maximum Ratings and Characteristics Symbol Parameter Test Conditions IS Continuous Source-Drain Diode Forward Current ISM ISM Pulsed Source-Drain Diode Forward Current VSD Source-Drain Diode Forward Voltage IS= 9 A , VGS = 0 V trr Reverse Recovery Time Qrr Reverse Recovery Charge IS= 9 A , VGS = 0 V diF/dt=100A/μs Notes: 1. Repeativity rating : pulse width limited by junction temperature 2. L = 21mH, IAS =9.0A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C 3. ISD ≤ 9.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. Min ------ Typ. 60 130 110 80 47 15 20 Max. -------- Units ns ns ns ns nC nC nC Typ. ---550 6.5 Max. 9.0 35 1.4 --- Units A V ns μC Publication Order Number: [MS12N60] © Bruckewell Technology Corporation Rev. A -2014 MS9N90 900V N-Channel MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. (iii) Any and all implied warranties, including warranties of fitness for particular .


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