MS9N20E

MS9N20E Dual N-Channel 20-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DFN2X5 6PP saves board space Fast switching speed High performance trench technology Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [MS9N20E] © Bruckewell Technology Corporation Rev. A -2014 MS9N20E Dual N-Channel 20-V (D-S) MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Currenta (TA =25°C) Continuous Drain Currenta (TA =70°C) IDM Pulsed Drain Currentb IS Continuous Source Current (Diode Conduction)a Power Dissipationa (TA =25°C) PD Power Dissipationa (TA =70°C) TJ/TSTG Operating Junction and Storage Temperature Notes: a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Thermal Characteristics (Tc=25°C unless otherwise specified) Parameter Maximum Junction-to-Ambienta (t <= 10 sec) Maximum Junction-to-Ambienta (Steady-State) Static Characteristics Symbol Test Conditions V...