MS6N80

MS6N80 800V N-Channel MOSFET Description The MS6N80 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 37nC (Typ.) Extended Safe Operating Area RoHS compliant package Application Adapter Switching Mode Power Supply Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter VDSS Drain-Source Voltage Drain Current -Continuous (TC=25°C) ID Drain Current -Continuous (TC=100°C) IDM Drain Current –Pulsed VGS Gate-Source Voltage EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt PD Power Dissipation (TC=25°C) - Derate above 25°C Value 800 36 4.2 28 ±30 580 16.7 5.5 156 1.25 Unit V A A A V mJ mJ V/ns W W/°C Publication Order Number: [MS6N80] © Bruckewell Technology Corporation Rev. A -2014 MS6N80 800V N-Channel MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter TJ/TSTG Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, TL 1/8'' from case for 5 seconds ●Drain curr...