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LL103C

LGE

Small Signal Schottky Diodes

LL103A-LL103C Small Signal Schottky Diodes Features For general purpose applications Metal silicon schottky barrier dev...


LGE

LL103C

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Description
LL103A-LL103C Small Signal Schottky Diodes Features For general purpose applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and coupling diodes for fast switching and low logic level applications Mechanical Data Case:JEDEC MINI-MELF Polarity: Color band denotes cathode end Weight: Approx. 0.031 gram VOLTAGE RANGE: 40 -- 20 V CURRENT: 400 mW MINI-MELF Cathode indification 1 .5 0.1 3.4 +0.3 -0.1 0.4 0.1 Dimensions in millimeters ABSOLUTE RATINGS(LIMITING VALUES) Symbols LL103A LL103B Peak reverse voltage Pow er dissipation (Infinite Heat Sink) Single cycle surge 60Hz sine w ave Forward continuous current VRRM Ptot I FSM I(AV) 40 30 4001) 15 200 Junction tenperature TJ 125 Storage temperature range TSTG -55 ---+ 150 1)Valid provided that leads at a distance of 4mm from case are kept at ambient temperature LL103C 20 UNITS V mW A mA ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherw ise specified) Reverse breakdow n voltage @ IR=50 A LL103A LL103B LL103C Leakage current @ VR=50V LL103A,VR=30V LL103B,VR=20V LL103C,VR=10V Forw ard voltage drop @ I F=20mA I F=200mA Junction capacitance @ VR=0V,f=1MHz Reverse recovery time @ IF=IR=50mAto200mA,recover to0.1IR Thermal resistance junction to ambient air Symbols VR IR VF CJ trr RθJA Min. 40 30 20 - - - Typ. - - 50 10 250 Max. ...




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