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PXT2907A

Jin Yu Semiconductor

PNP Transistor

PXT290A7 TRANSISTOR(PNP) SOT-89-3L FEATURES z Switching and Linear Amplification z High Current and Low Voltage z Com...


Jin Yu Semiconductor

PXT2907A

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PXT290A7 TRANSISTOR(PNP) SOT-89-3L FEATURES z Switching and Linear Amplification z High Current and Low Voltage z Complement to PXT2222A MARKING:p2F MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 1. BASE 2. COLLECTOR 3. EMITTER Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -60 -60 -5 -600 500 250 150 -55~+150 Unit V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 Collector cut-off current ICBO VCB=-50V,IE=0 Emitter cut-off current IEBO VEB=-5V,IC=0 VCE=-10V, IC=-0.1mA VCE=-10V, IC=-1mA DC current gain hFE VCE=-10V, IC=-10mA VCE=-10V, IC=-150mA VCE=-10V, IC=-500mA Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-50mA IC=-150mA,IB=-15mA Base-emitter saturation voltage VBE(sat) IC=-500mA,IB=-50mA IC=-150mA,IB=-15mA Delay time Rise time Storage time td tr VCC=-30V, IC=-150mA, IB1=- IB2=-15mA ts Fall time tf Transition frequency fT VCE=-10V,IC=-20mA, f=100MHz Min Typ -60 -60 -5 75 100 100 100 50 200 Max -0.01 -0.01 300 -1.6 -0.4 -2.6 -1.3 12 30 300 65 Unit V V V µA µA V V V V ns ns ns n...




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