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KXC1504 Dataheets PDF



Part Number KXC1504
Manufacturers Kexin
Logo Kexin
Description NPN Transistors
Datasheet KXC1504 DatasheetKXC1504 Datasheet (PDF)

SMD Type NPN Transistors KXC1504 Transistors ■ Features ● Collector Power Dissipation: PC=0.5W ● Collector Current: IC=1.5A 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 40 25 5 1.5 0.5 150 -55 to +150 Unit V V V A W ℃ ℃ ■ Electrical Characteristics Ta = 25℃ Par.

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SMD Type NPN Transistors KXC1504 Transistors ■ Features ● Collector Power Dissipation: PC=0.5W ● Collector Current: IC=1.5A 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 40 25 5 1.5 0.5 150 -55 to +150 Unit V V V A W ℃ ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Base-emitter positive favor voltage output capacitance Transition frequency Symbol Testconditions VCBO IC= 100μA, IE=0 VCEO IC= 0.1mA, IB=0 VEBO IE= 100μA, IC=0 ICBO VCB= 40 V,IE=0 ICEO VCE= 20V, IB=0 IEBO VEB= 5V, IC=0 VCE= 1V, IC= 100mA hFE VCE= 1V, IC= 800mA VCE(sat) IC=800mA, IB= 80mA VBE(sat) IC=800mA, IB=80mA VBE(on) Ic=1V,VCE=10mA VBEF IB=1A Cob VCB=10V,IE=0,f=1MHz fT VCE= 10V, IC=50mA ■ Marking Marking MY 1.Base 2.Collector 3.Emitter Min Typ Max Unit 40 V 25 V 5V 0.1 μA 0.1 μA 0.1 μA 160 320 40 0.5 V 1.2 V 1V 1.3 V 15 pF 100 MHz www.kexin.com.cn 1 SMD Type Transistors ■ Typical Characteristics NPN Transistors KXC1504 IC[mA], COLLECTOR CURRENT 0.5 IB = 3.0mA 0.4 IB = 2.5mA 0.3 IB = 2.0mA IB = 1.5mA 0.2 IB = 1.0mA 0.1 IB = 0.5mA 0 0.4 0.8 1.2 1.6 2.0 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic hFE, DC CURRENT GAIN 1000 100 VCE = 1V 10 1 0.1 1 10 100 IC[mA], COLLECTOR CURRENT Figure 2. DC current Gain 1000 10000 1000 VBE(sat) IC = 10 IB 100 10 VCE = 1V IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE 100 VCE(sat) 10 0.1 1 10 100 1000 IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 100 IE = 0 f = 1MHz 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 VBE[V], BASE-EMITTER VOLTAGE 1.2 Figure 4. Base-Emitter On Voltage 1000 100 VCE = 10V fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT Cob [pF], CAPACITANCE 10 10 1 1 10 100 VCB [V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance 1 1 10 100 400 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product 2 www.kexin.com.cn .


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