Document
SMD Type
NPN Transistors KXC1504
Transistors
■ Features
● Collector Power Dissipation: PC=0.5W ● Collector Current: IC=1.5A
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Rating 40 25 5 1.5 0.5 150
-55 to +150
Unit V V V A W ℃ ℃
■ Electrical Characteristics Ta = 25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Base-emitter positive favor voltage output capacitance Transition frequency
Symbol
Testconditions
VCBO IC= 100μA, IE=0
VCEO IC= 0.1mA, IB=0
VEBO IE= 100μA, IC=0
ICBO VCB= 40 V,IE=0
ICEO VCE= 20V, IB=0
IEBO VEB= 5V, IC=0
VCE= 1V, IC= 100mA hFE
VCE= 1V, IC= 800mA
VCE(sat) IC=800mA, IB= 80mA
VBE(sat) IC=800mA, IB=80mA
VBE(on) Ic=1V,VCE=10mA
VBEF IB=1A
Cob VCB=10V,IE=0,f=1MHz
fT VCE= 10V, IC=50mA
■ Marking
Marking
MY
1.Base 2.Collector 3.Emitter
Min Typ Max Unit 40 V 25 V 5V
0.1 μA 0.1 μA 0.1 μA 160 320 40 0.5 V 1.2 V 1V 1.3 V 15 pF 100 MHz
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SMD Type
Transistors
■ Typical Characteristics
NPN Transistors KXC1504
IC[mA], COLLECTOR CURRENT
0.5
IB = 3.0mA
0.4
IB = 2.5mA 0.3 IB = 2.0mA
IB = 1.5mA
0.2
IB = 1.0mA
0.1
IB = 0.5mA
0 0.4 0.8 1.2 1.6 2.0
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
hFE, DC CURRENT GAIN
1000 100
VCE = 1V
10
1 0.1 1 10 100
IC[mA], COLLECTOR CURRENT
Figure 2. DC current Gain
1000
10000 1000
VBE(sat)
IC = 10 IB
100 10
VCE = 1V
IC[mA], COLLECTOR CURRENT
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
100 VCE(sat)
10 0.1
1
10 100 1000
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
1000 100
IE = 0 f = 1MHz
1
0.1 0.0
0.2 0.4 0.6 0.8 1.0
VBE[V], BASE-EMITTER VOLTAGE
1.2
Figure 4. Base-Emitter On Voltage
1000 100
VCE = 10V
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
Cob [pF], CAPACITANCE
10 10
1 1 10 100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
1 1 10 100 400
IC[mA], COLLECTOR CURRENT
Figure 6. Current Gain Bandwidth Product
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