KXC1502

SMD Type NPN Transistors KXC1502 Transistors ■ Features ● Collector Power Dissipation: PC=0.5W ● Collector Current: IC=1.5A 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current -Continuous IC Collector Power Dissipation PC Junction Temperature Tj Storage Temperature Tstg Rating 40 20 5 1.5 0.5 150 -55 to 150 Unit V V V A W ℃ ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Output capacitance Transition frequency Symbol Test conditions V(BR)CBO IC= 100μA, IE=0 V(BR)CEO IC= 1mA, IB=0 V(BR)EBO IE= 100μA, IC=0 ICBO VCB= 40V, IE=0 IEBO VEB =5V, I C=0 VCE= 1V, IC= 100mA hFE VCE= 1V, IC= 800mA VCE(sat) IC= 800mA, IB= 80mA VBE(sat) IC= 800mA, IB= 80mA Cob VCB= 10V,IE=0,f=1MHz fT VCE= 6V, I C= 20mA ,f=30MHz ■ Marking Marking D882 Min Typ Max Unit 40 V 20 40 V 5V 0.1 μA 0.1 μA 160 320 40 0.5 V 1.2 V 20 pF 100 MHz www.kexin.com.cn 1 SMD Type Transistors IC[A], COLLECTOR CURRENT Typical Characteristics NPN Transistors KXC1502 0.5 IB = 3.0mA 0.4 IB = 2.5mA 0.3 IB = 2.0mA IB = 1.5mA 0.2 IB = 1.0mA 0.1 IB = 0.5mA 0 0.4 0.8 1.2 1.6 2.0 VCE[V], COLLECTOR-EMI...