KXA1504

SMD Type PNP Transistors KXA1504 Transistors ■ Features ● Collector Power Dissipation: PC=0.5W ● Collector Current: IC=-1.5A 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -40 -25 -5 -1.5 0.5 150 -55 to +150 Unit V V V A W ℃ ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Base-emitter positive favor voltage output capacitance Transition frequency ■ Marking Marking NY Symbol Test conditions VCBO IC= -100μA, IE=0 VCEO IC = -0.1mA, IB=0 VEBO IE= -100μA, IC=0 ICBO VCB= -40 V,IE=0 ICEO VCE= -20V, IB=0 IEBO VEB= -5V, IC=0 VCE= -1V, IC= -100mA hFE VCE= -1V, IC = -800mA VCE(sat) IC=-800mA, IB= -80mA VBE(sat) IC=-800mA, IB=-80mA VBE(on) Ic=-1V,VCE=-10mA VBEF IB=-1A Cob VCB=-10V,IE =0,f=1MHz fT VCE= -10V, IC=-50mA 1.Base 2.Collector 3.Emitter Min Typ Max Unit -40 V -25 V -5 V -0.1 μA -0.1 μA -0.1 μA 160 320 40 -0.5 V -1.2 V -1 V -1.3 V 20 pF 100 MHz www.kexin.com.cn 1 SMD Type Transistors PNP Transistors ■ Typical Characteristics -0 .5 -0 .4 -0 ....