KTC4076

SMD Type NPN Transistors KTC4076 Transistors ■ Features ● Excellent hFE Linearity ● Complementary to KTA2015 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IB PC TJ Tstg Rating 35 30 5 500 50 100 150 -55 to 150 Unit V mA mW ℃ 1.Base 2.Emitter 3.collector ■ Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage Base - emitter voltage DC current gain Symbol VCBO VCEO VEBO ICBO IEBO VCE(sat) VBE(sat) VBE hFE Test Conditions Ic= 100uA， IE= 0 Ic= 1 mA，IB=0 IE= 100uA， IC= 0 VCB= 35V , IE= 0 VEB= 5V , IC=0 IC=100mA, IB=10mA IC=100mA, IB=10mA VCE= 1V, IC=100mA VCE= 1V, IC=100mA VCE= 6V, IC=400mA O Y Collector output capacitance Transition frequency Cob VCB= 6V,IE=0,f=1MHz fT VCE= 6V, IC= 20mA Min Typ Max Unit 35 30 V 5 0.1 uA 0.1 0.25 1.2 V 1 70 240 25 40 7 pF 300 MHz ■ Classification of hfe Type KTC4076-O Range 70-140 Marking WO KTC4076-Y 120-240 WY www.kexin.com.cn 1 ...