KTC3876

BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Complementary To KTA1505. z Excellent HFE Linearity. z Low noise. Pb Lead-free KTC3876 APPLICATIONS z General purpose application, switching application. ORDERING INFORMATION Type No. Marking KTC3876 WO▪/WY▪/WG▪ SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 35 VCEO Collector-Emitter Voltage 30 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 500 PC Collector Power Dissipation 200 Tj,Tstg Junction and Storage Temperature -55~150 Units V V V mA mW ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC057 Rev.A www.galaxycn.com 1 BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor Production specification KTC3876 Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V Collector cut-off current Emitter cut-off current ICBO IEBO DC current gain hFE Collector-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) fT Cob VCB=35V,IE=0 VEB=5V,IC=0 VCE=1V,IC=100mA 70 VCE=6V,IC=400mA O 25 Y 40 IC=100mA, IB=10mA VCE=6V, IC= 20mA VCB=6V,IE=0,f=1MHz 0.1 μA 0.1 μA 400 0.25 V 300 MHz 7 pF CL...