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KTC3876

SeCoS

NPN Transistor

Elektronische Bauelemente KTC3876 0.5A , 35V NPN Plastic Encapsulated Transistor FEATURE High hFE Complementary to KTA...


SeCoS

KTC3876

File Download Download KTC3876 Datasheet


Description
Elektronische Bauelemente KTC3876 0.5A , 35V NPN Plastic Encapsulated Transistor FEATURE High hFE Complementary to KTA1505 CLASSIFICATION OF hFE Product-Rank KTC3876-O Range 70~140 Marking Code WO PACKAGE INFORMATION Package MPQ SOT-23 3K RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free KTC3876-Y 120~240 WY KTC3876-GR 200~400 WG Leader Size 7 inch SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 Collector 3 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG 35 30 5 500 200 150, -55 ~ 150 1 Base 2 Emitter Unit V V V mA mW °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO 35 - - V IC=100µA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 30 - - V IC=1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=100µA, IC=0 Collector Cut-Off Current ICBO - - 0.1 µA VCB=35V, IE=0 Emitter Cut-Off Current IEBO - - 0.1 µA VEB=5V, IC=0 hFE(1) 70 - 400 VCE=1V, IC=100mA DC...




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