Elektronische Bauelemente
KTC3876
0.5A , 35V NPN Plastic Encapsulated Transistor
FEATURE
High hFE Complementary to KTA...
Elektronische Bauelemente
KTC3876
0.5A , 35V
NPN Plastic Encapsulated
Transistor
FEATURE
High hFE Complementary to KTA1505
CLASSIFICATION OF hFE
Product-Rank
KTC3876-O
Range
70~140
Marking Code
WO
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
KTC3876-Y 120~240 WY
KTC3876-GR 200~400 WG
Leader Size 7 inch
SOT-23
A
L
3
Top View
CB
12
KE
1
3 2
D F GH J
REF.
A B C D E F
Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50
REF.
G H J K L
Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177
0.6 REF. 0.89 1.02
Collector
3
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature
VCBO VCEO VEBO
IC PC TJ, TSTG
35 30 5 500 200 150, -55 ~ 150
1
Base
2
Emitter
Unit
V V V mA mW °C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
35
-
-
V IC=100µA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
30
-
-
V IC=1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
5
-
-
V IE=100µA, IC=0
Collector Cut-Off Current
ICBO - - 0.1 µA VCB=35V, IE=0
Emitter Cut-Off Current
IEBO - - 0.1 µA VEB=5V, IC=0
hFE(1) 70 - 400
VCE=1V, IC=100mA
DC...