CS48N75

CS48N75 ® Pb Free Plating Product CS48N75 Pb 70V,68A N-Channel Trench Process Power MOSFET General Description The CS48N75 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features ● VDS=70V；ID=68A@ VGS=10V； RDS(ON)<8.4mΩ @ VGS=10V ● Special Designed for E-Bike Controller Application ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● 48V E-Bike Controller Applications ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply CS48N75 (TO-220 HeatSink) G DS Schematic Diagram VDS = 70 V ID = 68A RDS(ON) = 7mΩ Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V) VGS Gate-Source Voltage (VDS=0V) ID (DC) ID (DC) IDM (pluse) Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) dv/dt Peak Diode Recovery Voltage PD Maximum Power Dissipation(Tc=25℃) Derating Factor EAS Single Pulse Avalanche Energy (Note 2) TJ,TSTG Operating Junction and Storage Temperature Range Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2.EAS condition:TJ=25℃,VDD=33V,VG=10V,ID=37A Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Value 70 ±25 68 47.6 272 30 85 0.57 342 -55 To 175 Unit V V A A A V/ns W W/℃ mJ ℃ Page 1/5 http://www.thinkisemi.com/ CS48N75 ® Table ...