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BZT52B20 Dataheets PDF



Part Number BZT52B20
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description SMD Zener Diode
Datasheet BZT52B20 DatasheetBZT52B20 Datasheet (PDF)

Small Signal Product BZT52B2V4 - BZT52B75 Taiwan Semiconductor 500mW, 2% Tolerance SMD Zener Diode FEATURES - Wide zener voltage range selection : 2.4V to 75V - Surface Mount Device Type - Moisture sensitivity level 1 - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code - Ideal for Surface Mounted Applications - VZ Tolerance Selection of ±2% - Matte Tin(Sn) lead finish with Nickel(Ni) underplate SOD-123F MECHANICAL DATA - Ca.

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Document
Small Signal Product BZT52B2V4 - BZT52B75 Taiwan Semiconductor 500mW, 2% Tolerance SMD Zener Diode FEATURES - Wide zener voltage range selection : 2.4V to 75V - Surface Mount Device Type - Moisture sensitivity level 1 - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code - Ideal for Surface Mounted Applications - VZ Tolerance Selection of ±2% - Matte Tin(Sn) lead finish with Nickel(Ni) underplate SOD-123F MECHANICAL DATA - Case: Flat lead SOD-123 small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260°C/10s - Polarity: Indicated by cathode band - Weight : 8.85 ± 0.5mg MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL VALUE Forward Voltage @ IF = 10mA VF Power Dissipation PD Thermal Resistance from Junction to Ambient (Note 1) RθJA Junction Temperature TJ Storage Temperature TSTG Notes: 1. Valid provided that electrodes are kept at ambient temperature 1 500 350 150 - 65 to + 150 UNIT V mW oC/W oC oC ZENER I vs. V CHARACTERISTICS VBR : Voltage at IZK IZK : Test current for voltage VBR ZZK : Dynamic impedance at IZK IZT : Test current for voltage VZ VZ : Voltage at current IZT ZZT : Dynamic impedance at IZT IZM : Maximum steady state current VZM : Voltage at IZM Document Number: DS_S1405026 Version: E14 Small Signal Product BZT52B2V4 - BZT52B75 Taiwan Semiconductor ELECTRICAL CHARACTERISTICS (Ratings at TA=25oC ambient temperature unless otherwise specified, and VF Forward Voltage = 1V Maximum @ IF = 10 mA for all part numbers) Device Type Marking code Zener Voltage Range Maximun Zener Impedance Maximun Reverse Current VZ @ IZT IZT ZZT @ IZT ZZk @ Izk IZK IR VR Min(V) Nom(V) Max(V) mA Ohm mA uA V BZT52B2V4 2V4B 2.35 2.40 2.45 5 100 564 1 45 1 BZT52B2V7 2V7B 2.65 2.70 2.75 5 100 564 1 18 1 BZT52B3V0 3V0B 2.94 3.00 3.06 5 100 564 191 BZT52B3V3 3V3B 3.23 3.30 3.37 5 95 564 1 4.5 1 BZT52B3V6 3V6B 3.53 3.60 3.67 5 90 564 1 4.5 1 BZT52B3V9 3V9B 3.82 3.90 3.98 5 90 564 1 2.7 1 BZT52B4V3 4V3B 4.21 4.30 4.39 5 90 564 1 2.7 1 BZT52B4V7 4V7B 4.61 4.70 4.79 5 80 470 1 2.7 2.0 BZT52B5V1 5V1B 5.00 5.10 5.20 5 60 451 1 1.8 2.0 BZT52B5V6 5V6B 5.49 5.60 5.71 5 40 376 1 0.9 2.0 BZT52B6V2 6V2B 6.08 6.20 6.32 5 10 141 1 2.7 4.0 BZT52B6V8 6V8B 6.66 6.80 6.94 5 15 75 1 1.8 4.0 BZT52B7V5 7V5B 7.35 7.50 7.65 5 15 75 1 0.9 5.0 BZT52B8V2 8V2B 8.04 8.20 8.36 5 15 75 1 0.63 5.0 BZT52B9V1 9V1B 8.92 9.10 9.28 5 15 94 1 0.45 6.0 BZT52B10 10VB 9.80 10.00 10.20 5 20 141 1 0.18 7.0 BZT52B11 11VB 10.78 11.00 11.22 5 20 141 1 0.09 8.0 BZT52B12 12VB 11.76 12.00 12.24 5 25 141 1 0.09 8.0 BZT52B13 13VB 12.74 13.00 13.26 5 30 160 1 0.09 8.0 BZT52B15 15VB 14.70 15.00 15.30 5 30 188 1 0.045 10.5 BZT52B16 16VB 15.68 16.00 16.32 5 40 188 1 0.045 11.2 BZT52B18 18VB 17.64 18.00 18.36 5 45 212 1 0.045 12.6 BZT52B20 20VB 19.60 20.00 20.40 5 55 212 1 0.045 14.0 BZT52B22 22VB 21.56 22.00 22.44 5 55 235 1 0.045 15.4 BZT52B24 24VB 23.52 24.00 24.48 5 70 235 1 0.045 16.8 BZT52B27 27VB 26.46 27.00 27.54 2 80 282 0.5 0.045 18.9 BZT52B30 30VB 29.40 30.00 30.60 2 80 282 0.5 0.045 21.0 BZT52B33 33VB 32.34 33.00 33.66 2 80 306 0.5 0.045 23.0 BZT52B36 36VB 35.28 36.00 36.72 2 90 329 0.5 0.045 25.2 BZT52B39 39VB 38.22 39.00 39.78 2 130 329 0.5 0.045 27.3 BZT52B43 43VB 42.14 43.00 43.86 2 150 353 0.5 0.045 30.1 BZT52B47 47VB 46.06 47.00 47.94 2 170 353 0.5 0.045 33.0 BZT52B51 51VB 49.98 51.00 52.02 2 180 376 0.5 0.045 35.7 BZT52B56 56VB 54.88 56.00 57.12 2 200 400 0.5 0.045 39.2 BZT52B62 62VB 60.76 62.00 63.24 2 215 423 0.5 0.045 43.4 BZT52B68 68VB 66.64 68.00 69.36 2 240 447 0.5 0.045 47.6 BZT52B75 75VB 73.50 75.00 76.50 2 255 470 0.5 0.045 52.5 Notes: 1. The Zener Voltage (VZ) is tested under pulse condition of 10ms. 2. The device numbers listed have a standard tolerance on the nomial zener voltage of ±2%. 3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative. 4. The Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an RMS value equal to 10% of the dc zener current is superimposed to IZT or IZK. Document Number: DS_S1405026 Version: E14 Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) 1000 Fig. 1 Typical Forward Characteristics Forward Current (mA) 100 10 TA=25oC 1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Forward Voltage (V) Fig. 3 Zener Breakdown Characteristics 100 10 1 0.1 0.01 15 25 35 45 55 65 75 85 Zener Voltage (V) Zener Current (mA) Capacitance (pF) 1000 100 10 1 1 Fig. 5 Typical Cap.


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