IS65WV1288DBLL

IS62WV1288DALL/DBLL IS65WV1288DALL/DBLL 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM OCTOBER 2009 FEATURES High-speed access time: 35ns, 45ns, 55ns CMOS low power operation: 12 mW (typical) operating 4 µW (typical) CMOS standby TTL compatible interface levels Single power supply: 1.65V--2.2V Vdd (62WV1288DALL) 2.3V--3.6V Vdd (62WV1288DBLL) Fully static operation: no clock or refresh required Three state outputs Industrial and automotive temperature support Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS62/65WV1288DALL and IS62/65WV1288DBLL are high-speed, 1M bit static RAMs organized as 128K words by 8 bits. It is fabricated using ISSI's high- performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is low (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62/65WV1288DALL and IS62/65WV1288DBLL are packaged in the JEDEC standard 32-pin TSOP (TYPEI), sTSOP (TYPEI), SOP, and 36-pin mini BGA. A0-A16 VDD GND I/O0-I/O7 DECODER I/O DATA CIRCUIT CS2 CS1 OE WE CONTROL CIRCUIT 128K x 8 MEMORY ARRAY COLUMN I/O Integrated Si...