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B5817W

WEJ
Part Number B5817W
Manufacturer WEJ
Description SCHOTTKY BARRIER DIODE
Published May 17, 2016
Detailed Description RoHS B5817W B5817W SCHOTTKY BARRIER DIODE FEATURES DPower dissipation PD : 450 mW Tamb=25 TCollector current .,LIF: 1 A...
Datasheet PDF File B5817W PDF File

B5817W
B5817W

Overview
RoHS B5817W B5817W SCHOTTKY BARRIER DIODE FEATURES DPower dissipation PD : 450 mW Tamb=25 TCollector current .
,LIF: 1 A Collector-base voltage VR: 20 V Operating and storage junction temperature range OTJ Tstg: -55 to +150 CMARKING SJ Unit mm ICELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified ONParameter Reverse breakdown voltage RReverse voltage leakage current TForward voltage WEJ ELECDiodecapacitance Symbol Test conditions V(BR) IR VF CD IR= 1mA VR=20V IF=1A IF=3A VR=4V f=1MHz MIN MAX UNIT 20 1 0.
45 0.
75 120 V V WEJ ELECTRONIC CO.
Http:// www.
wej.
cn E-mail:wej@yongerjia.
com RoHS B5817W WEJ ELECTRONIC CO.
,LTD WEJ ELECTRONIC CO.
Http:// www.
wej.
cn E-mail:wej@y...


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