B5819W

BL Galaxy Electrical Production specification Schottky Barrier Diode FEATURES z Extremely low VF. z Low stored change,majority carrier conduction. z Low power loss/high efficient Pb Lead-free B5817W-B5819W APPLICATIONS z For Use In Low Voltage, High Frequency Inverters. z Free Wheeling, And Polarity Protection Applications. ORDERING INFORMATION Type No. Marking B5817W B5818W B5819W SJ SK SL SOD-123 Package Code SOD-123 SOD-123 SOD-123 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter symbol B5817W Non-Repetitive Peak reverse voltage VRSM 24 B5818W 36 B5819W Unit 48 V Peak repetitive Peak reverse voltage VRRM Working Peak Reverse voltage VRWM 20 30 40 V DC Reverse Voltage VR RMS Reverse Voltage Average Rectified output Current Peak forward surge current@=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Storage temperature VR(RMS) Io IFSM Pd RθJA TJ,TSTG 14 1 25 250 80 -65~+125 21 28 V A A mW ℃/W ℃ Document number: BL/SSSKA006 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification Schottky Barrier Diode B5817W-B5819W ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Reverse breakdown voltage Symbol Test Condition IR=1mA V(BR) Reverse voltage leakage current IR Forward voltage Diode capacitance VF CD VR=20V VR=30V VR=40V B5817W B5818W B5819W VR=4V,f=1MHz B5817W B5818W B5819W B5817W B5818W B5819W IF=1A IF=3A IF=1A IF=3A IF=1A IF=3A MIN 20 30 40 MAX UNIT V 1 mA 0.45 0...