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B5819W

LGE

Schottky Barrier Diode

B5817W-B5819W Schottky Barrier Diode + SOD-123 0.053(1.35) Max. 0.022(0.55) Typ. Min. Features - For use in low vo...


LGE

B5819W

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Description
B5817W-B5819W Schottky Barrier Diode + SOD-123 0.053(1.35) Max. 0.022(0.55) Typ. Min. Features - For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. 0.152(3.85) 0.140(3.55) 0.010(0.25) Min. 0.112(2.85) 0.100(2.55) 0.006(0.15) Typ. Min. 0.067(1.70) 0.055(1.40) MARKING: B5817W: SJ B5818W:SK B5819W: SL 0.004(0.10) Max. Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Non-Repetitive Peak reverse voltage Peak repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current Peak forward surge current @=8.3ms Repetitive Peak Forward Current Power Dissipation Thermal Resistance Ambient Storage temperature Junction to Symbol VRM VRRM VRWM VR VR(RMS) IO IFSM IFRM Pd RθJA TSTG B5817W 20 20 14 B5818W 30 30 21 1 25 625 250 500 -65~+150 B5819W 40 40 28 Unit V V V A A mA mW K/W ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Symbol V(BR) IR VF CD Test conditions IR= 1mA VR=20V VR=30V VR=40V B5817W B5818W B5819W B5817W B5818W B5819W B5817W B5818W B5819W IF=1A IF=3A IF=1A IF=3A IF=1A IF=3A VR=4V, f=1MHz MIN 20 30 40 MAX UNIT V 1 0.45 0.75 0.55 0.875 0.6 0.9 120 mA V V V pF http://www.luguang.cn mail:[email protected] Typical Characteristics B5817W-B5819...




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