ME2345A-G

P-Channel 30V (D-S) MOSFET ME2345A/ME2345A-G GENERAL DESCRIPTION The ME2345A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-23) Top View FEATURES ● RDS(ON) ≦68mΩ@VGS=-10V ● RDS(ON) ≦80mΩ@VGS=-4.5V ● RDS(ON) ≦100mΩ@VGS=-2.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC e Ordering Information: ME2345A (Pb-free) ME2345A-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature TA=25℃ TA=70℃ TA=25℃ TA=70℃ Thermal Resistance-Junction to Ambient* Symbol VDS VGS ID IDM PD TJ RθJA Maximum Ratings -30 ±12 -3.6 -2.9 -14 1.4 0.9 -55 to 150 90 *The device mounted on 1in2 FR4 board with 2 oz copper Unit V V A A W ℃ ℃/W Jun, 2012-Ver4.4 01 ME2345A/ME2345A-G P-Chan...