STP33N10 STP33N10FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE
STP33N10 STP33N10FI
VDSS
100 V 100 V
R DS( on)
< 0.06 Ω < 0.06 Ω
ID
33 A 18 A
s TYPICAL RDS(on) = 0.045 Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW GATE CHARGE s HIGH CURRENT CAPABILITY s 175oC OPERATING TEMPERATURE s APPLICA...
