Document
SEMICONDUCTOR
TECHNICAL DATA
KTD2058
TRIPLE DIFFUSED NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES Low Saturation Voltage : VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. Complementary to KTB1366.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
VCBO VCEO VEBO
IC IB
Collector Power Dissipation
Ta=25 Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING 60 60 7 3 0.5 2 25 150
-55 150
UNIT V V V A A
W
K
A S
E
LL M
DD
NN
J
GF B P
C
DIM MILLIMETERS
A 10.0+_ 0.3
B 15.0+_ 0.3
C 2.70 +_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_ 0.2 F 3.0+_ 0.3
G 12.0+_ 0.3
H 0.5+0.1/-0.05 J 13.6 +_ 0.5 R K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_ 0.1
P 6.8+_ 0.1
Q 4.5 +_ 0.2
R 2.6 +_0.2
HS
0.5 Typ
123
Q
1. BASE 2. COLLECTOR 3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance
ICBO IEBO V(BR)CEO hFE (Note) VCE(sat) VBE fT Cob
Turn-on Time
ton
Switching Time
Storage Time
tstg
Fall Time
tf
Note : hFE Classification O:60 120, Y:100 200
TEST CONDITION
VCB=60V, IE=0 VEB=7V, IC=0 IC=50mA, IB=0 VCE=5V, IC=0.5A IC=2A, IB=0.2A VCE=5V, IC=0.5A VCE=5V, IC=0.5A VCB=10V, IE=0, f=1MHz
20µsec IB1
INPUT IB2
IB1 IB2
IB1=-I B2 =0.2A DUTY CYCLE <= 1%
OUTPUT 15Ω
VCC =30V
MIN. 60 60 -
TYP. -
0.25 0.7 3.0 35
MAX. UNIT 1A 1A -V 200 1.0 V 1.0 V - MHz - pF
- 0.65 -
- 1.3 -
S
- 0.65 -
2009. 7. 23
Revision No : 4
1/2
KTD2058
COLLECTOR CURRENT IC (A)
3.0 90 80
2.5 70
2.0
1.5
1.0
I C - VCE
60 50 40 30
20
IB =10mA
0.5 COMMON EMITTER Tc=25 C
0 0
012345678
COLLECTOR-EMITTER VOLTAGE VCE (V)
h FE - IC
300 Tc=100 C Tc=25 C
100 Tc=-25 C
50 30
10 0.02 0.05 0.1
COMMON EMITTER VCE =5V
0.3 1
3 10
COLLECTOR CURRENT IC (A)
DC CURRENT GAIN h FE
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
VCE(sat) - I C
1 COMMON EMITTER IC /I B=10
0.5
0.3
0.1
0.05 0.03
0.02 0.05
Tc=100 C Tc=25 C Tc=-25 C
0.1 0.3 1
35
COLLECTOR CURRENT IC (A)
10
2009. 7. 23
Revision No : 4
COLLECTOR CURRENT IC (A)
COLLECTOR POWER DISSIPATION PC (W)
Pc - Ta
40
35
30 1
25
20 2 3
15 4 10 5
6 57
8
1 Tc=Ta INFINITE HEAT SINK
2 300x300x2mm Al HEAT SINK
3 200x200x2mm Al HEAT SINK
4 100x100x1mm Al HEAT SINK
5 100x100x1mm Fe HEAT SINK 6 50x50x1mm Al HEAT SINK
7 50x50x1mm Fe HEAT SINK
8 NO HEAT SINK
0 0 25 50 75 100 125 150 175 200
AMBIENT TEMPERATURE Ta ( C)
SAFE OPERATING AREA
10
IC MAX(PULSED) *
5
1mS 101m00SmS
3 IC MAX(CONTINUOUS)
1
DCTcO=P2E5RCATION
* *
1s *
*
0.5 * SINGLE NONREPETITIVE PULSE Tc=25 C
0.3 CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE
0.1 1
3 5 10
30 50 100
VCEO MAX.
COLLECTOR-EMITTER VOLTAGE VCE (V)
2/2
.