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KTD2058 Dataheets PDF



Part Number KTD2058
Manufacturers KEC
Logo KEC
Description TRIPLE DIFFUSED NPN TRANSISTOR
Datasheet KTD2058 DatasheetKTD2058 Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA KTD2058 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Low Saturation Voltage : VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. Complementary to KTB1366. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current VCBO VCEO VEBO IC IB Collector Power Dissipation Ta=25 Tc=25 PC Junction Temperature Tj Storage Temperature Range Tstg RATING 60 60 7 3 0.5 2 .

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SEMICONDUCTOR TECHNICAL DATA KTD2058 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Low Saturation Voltage : VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. Complementary to KTB1366. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current VCBO VCEO VEBO IC IB Collector Power Dissipation Ta=25 Tc=25 PC Junction Temperature Tj Storage Temperature Range Tstg RATING 60 60 7 3 0.5 2 25 150 -55 150 UNIT V V V A A W K A S E LL M DD NN J GF B P C DIM MILLIMETERS A 10.0+_ 0.3 B 15.0+_ 0.3 C 2.70 +_ 0.3 D 0.76+0.09/-0.05 E Φ3.2 +_ 0.2 F 3.0+_ 0.3 G 12.0+_ 0.3 H 0.5+0.1/-0.05 J 13.6 +_ 0.5 R K 3.7+_ 0.2 L 1.2+0.25/-0.1 M 1.5+0.25/-0.1 N 2.54 +_ 0.1 P 6.8+_ 0.1 Q 4.5 +_ 0.2 R 2.6 +_0.2 HS 0.5 Typ 123 Q 1. BASE 2. COLLECTOR 3. EMITTER TO-220IS ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance ICBO IEBO V(BR)CEO hFE (Note) VCE(sat) VBE fT Cob Turn-on Time ton Switching Time Storage Time tstg Fall Time tf Note : hFE Classification O:60 120, Y:100 200 TEST CONDITION VCB=60V, IE=0 VEB=7V, IC=0 IC=50mA, IB=0 VCE=5V, IC=0.5A IC=2A, IB=0.2A VCE=5V, IC=0.5A VCE=5V, IC=0.5A VCB=10V, IE=0, f=1MHz 20µsec IB1 INPUT IB2 IB1 IB2 IB1=-I B2 =0.2A DUTY CYCLE <= 1% OUTPUT 15Ω VCC =30V MIN. 60 60 - TYP. - 0.25 0.7 3.0 35 MAX. UNIT 1A 1A -V 200 1.0 V 1.0 V - MHz - pF - 0.65 - - 1.3 - S - 0.65 - 2009. 7. 23 Revision No : 4 1/2 KTD2058 COLLECTOR CURRENT IC (A) 3.0 90 80 2.5 70 2.0 1.5 1.0 I C - VCE 60 50 40 30 20 IB =10mA 0.5 COMMON EMITTER Tc=25 C 0 0 012345678 COLLECTOR-EMITTER VOLTAGE VCE (V) h FE - IC 300 Tc=100 C Tc=25 C 100 Tc=-25 C 50 30 10 0.02 0.05 0.1 COMMON EMITTER VCE =5V 0.3 1 3 10 COLLECTOR CURRENT IC (A) DC CURRENT GAIN h FE COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VCE(sat) - I C 1 COMMON EMITTER IC /I B=10 0.5 0.3 0.1 0.05 0.03 0.02 0.05 Tc=100 C Tc=25 C Tc=-25 C 0.1 0.3 1 35 COLLECTOR CURRENT IC (A) 10 2009. 7. 23 Revision No : 4 COLLECTOR CURRENT IC (A) COLLECTOR POWER DISSIPATION PC (W) Pc - Ta 40 35 30 1 25 20 2 3 15 4 10 5 6 57 8 1 Tc=Ta INFINITE HEAT SINK 2 300x300x2mm Al HEAT SINK 3 200x200x2mm Al HEAT SINK 4 100x100x1mm Al HEAT SINK 5 100x100x1mm Fe HEAT SINK 6 50x50x1mm Al HEAT SINK 7 50x50x1mm Fe HEAT SINK 8 NO HEAT SINK 0 0 25 50 75 100 125 150 175 200 AMBIENT TEMPERATURE Ta ( C) SAFE OPERATING AREA 10 IC MAX(PULSED) * 5 1mS 101m00SmS 3 IC MAX(CONTINUOUS) 1 DCTcO=P2E5RCATION * * 1s * * 0.5 * SINGLE NONREPETITIVE PULSE Tc=25 C 0.3 CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 0.1 1 3 5 10 30 50 100 VCEO MAX. COLLECTOR-EMITTER VOLTAGE VCE (V) 2/2 .


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