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SDB110 Dataheets PDF



Part Number SDB110
Manufacturers LGE
Logo LGE
Description Schottky Barrier Bridge Rectifiers
Datasheet SDB110 DatasheetSDB110 Datasheet (PDF)

SDB(S)12 - SDB(S)115 1.0 AMP. Schottky Barrier Bridge Rectifiers DB Features Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial construction High temperature soldering: 260oC/ 10 seconds at terminals Mechanical Data Case: Molded plastic Terminals: Pure tin plated, lead free. Polarity: Indicated by cathode band .047(1.20) .040(1.0.

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SDB(S)12 - SDB(S)115 1.0 AMP. Schottky Barrier Bridge Rectifiers DB Features Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial construction High temperature soldering: 260oC/ 10 seconds at terminals Mechanical Data Case: Molded plastic Terminals: Pure tin plated, lead free. Polarity: Indicated by cathode band .047(1.20) .040(1.02) .205(5.2) .195(5.0) DBS .335(8.51) .320(8.13) 450 .013(0.33) .0088(0.22) .404(10.3) .386(9.80) .255(6.5) .245(6.2) .130(3.30) .120(3.05) .060(1.53) .040(1.02) .013(0.33) .003(0.076) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol SDB SDB SDB SDB SDB SDB SDB SDB Units 12 13 14 15 16 19 110 115 SDBS SDBS SDBS SDBS SDBS SDBS SDBS SDBS 12 13 14 15 16 19 110 115 Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 50 60 90 100 150 V Maximum RMS Voltage VRMS 14 21 28 35 42 63 70 105 V Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TL(See Fig. 1) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) VDC I(AV) IFSM 20 30 40 50 60 90 100 150 1.0 30 V A A Maximum Instantaneous Forward Voltage (Note 1) @ 1.0A VF 0.5 0.75 0.80 0.95 V Maximum DC Reverse Current @ TA =25 oC at Rated DC Blocking Voltage @ TA=100 oC Typical Junction Capacitance (Note 3) IR Cj 0.4 10 5.0 50 0.1 mA 0.5 mA pF Typical Thermal Resistance ( Note 2 ) Operating Temperature Range Storage Temperature Range R θJL RθJA TJ TSTG -65 to +125 28 88 -65 to +150 -65 to +150 oC /W oC oC Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle 2. Measured on P.C.Board with 0.5” x 0.5” (12 mm x 12mm) Copper Pad Areas. 3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. http://www.luguang.cn mail:[email protected] AVERAGE FORWARD CURRENT. (A) INSTANTANEOUS FORWARD CURRENT. (A) SDB(S)12 - SDB(S)115 1.0 AMP. Schottky Barrier Bridge Rectifiers RATINGS AND CHARACTERISTIC CURVES (SDB(S)12 THRU SDB(S)115) PEAK FORWARD SURGE CURRENT. (A) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 1.0 RESISTIVE OR INDUCTIVE LOAD SDBS12- SDBS14 SDBS15-SDBS115 0.5 FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 50 AT RATED TL 40 8.3ms Single Half Sine Wave JEDEC Method 30 20 PCB MOUNTED ON 0.2X0.2" (5.0X5.0mm) COPPER PAD AREAS 0 50 60 70 80 90 100 110 120 130 LEAD TEMPERATURE. (oC) 140 150 160 170 FIG.3- TYPICAL FORWARD CHARACTERISTICS 50 Tj=250C 10.0 SDBS12-SDBS14 SDBS15-SDBS16 1 SDBS19-SDBS115 0.1 PULSE WIDTH=300 S 1% DUTY CYCLE 0.01 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 FORWARD VOLTAGE. (V) FIG.5- TYPICAL JUNCTION CAPACITANCE 400 Tj=250C f=1.0MHz Vsig=50mVp-p 100 INSTANTANEOUS .


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