11V - 220V Zener Diode
BZD17C11P – BZD17C220P
Taiwan Semiconductor
0.8W, 11V - 220V Zener Diode
FEATURES
● Silicon zener diodes ● Low profile...
Description
BZD17C11P – BZD17C220P
Taiwan Semiconductor
0.8W, 11V - 220V Zener Diode
FEATURES
● Silicon zener diodes ● Low profile surface-mount package ● Zener and surge current specification ● Low leakage current ● Excellent stability ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Voltage regulating ● Reference voltage ● Protection circuit
KEY PARAMETERS
PARAMETER VALUE UNIT
VZ
11 - 220
V
Test current IZT
4 - 50
mA
Ptot TJ MAX Package
0.8
W
175
°C
Sub SMA
Configuration
Single die
MECHANICAL DATA
● Case: Sub SMA ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.019g (approximately)
Sub SMA
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Forward voltage @ IF = 0.2A Power dissipation
VF
1.2
TL = 80°C
2.3
TA = 25°C(1)
Ptot
0.8
Non-repetitive peak pulse power dissipation 100μs square pulse(2)
PZSM
300
Junction temperature
TJ
- 55 to +175
Storage temperature
Notes: 1. Mounted on Cu-Pad size 5mm x 5mm 2. TJ = 25°C prior to surge
TSTG
- 55 to +175
UNIT V W W
W
°C °C
1
Version: L2103
BZD17C11P – BZD17C220P
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER Junction-to-lead thermal resistance Junction-to-ambient thermal resistance(1) Notes: 1. Mounted on Cu-Pad size 5mm x 5mm
SYMBOL RӨJ...
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