FDMC7200S

FDMC7200S Dual N-Channel PowerTrench® MOSFETs FDMC7200S June 2014 Dual N-Channel PowerTrench® MOSFETs 30 V, 22 mΩ, 10 mΩ Features Q1: N-Channel „ Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 6 A „ Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5 A Q2: N-Channel „ Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 8.5 A „ Max rDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7.2 A „ RoHS Compliant General Description This device includes two specialized N-Channel MOSFETs in a dual power33 (3mm X 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency. Applications „ Mobile Computing „ Mobile Internet Devices „ General Purpose Point of Load Pin 1 Bottom D1 D1 D1 G1 D1 D2/S1 S2 S2 S2 G2 Bottom VIN VIN GHSVIN VIN SWITCH NODE GND GND GND GLS 5 Q2 6 7 8 4 3 2 1 Q1 Power33 MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation for Single Operation TA = 25°C Power Dissipation for Single Operation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 4) (Note 3) Q1 Q2 30 30 ±20 ±20 18 13 23 46 7 1a 13 1b ...