SNN01Z10Q

SNN01Z10Q Logic Level N-Ch Power MOSFET Logic Level Gate Drive Application Features Logic level gate drive Max. RDS(ON) = 0.24Ω at VGS = 10V, ID = 0.5A Low RDS(on) provides higher efficiency ESD protected: 2000V (HBM: ±1000V) Halogen free and RoHS compliant device Ordering Information Part Number Marking Package SNN01Z10Q SNN01Z10Q SOT-223 G DS D SOT-223 Marking Information SNN01Z10Q YWW Column 1: Device Code Column 2: Production Information e.g.) YWW -. Y: Year Code -. WW: Week Code Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) * Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range VDSS VGSS ID Tc=25°C Tc=100°C IDM EAS IAR EAR PD TJ Tstg * Limited only maximum junction temperature Rating 100 ±20 1 0.63 4 35 1 0.18 1.8 150 -55~150 Unit V V A A A mJ A mJ W °C °C Rev. date: 24-NOV-11 KSD-T5A011-000 www.auk.co.kr 1 of 8 Thermal Characteristics Characteristic Thermal resistance, junction to ambient Symbol Rth(j-a) * When mounted on the minimum pad size recommended (PCB). Electrical Characteristics (Tj=25°C unless otherwise noted) Characteristic Symbol Test Condition Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-re...