RJK0406JPE

RJK0406JPE Silicon N Channel MOS FET High Speed Power Switching Features  For Automotive application  AEC-Q101 compliant  Low on-resistance : RDS(on) = 1.65 m typ.  High current devices : ID = 160 A  Low input capacitance : Ciss = 6300 pF typ Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 123 G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Tch = 25C, Rg  50  3. Tc = 25C 4. AEC-Q101 compliant Symbol VDSS VGSS I Note3 D ID (pulse) Note1 I Note3 DR IDR (pulse) Note1 I Note2 AP E Note2 AR Pch Note3 Tch Note4 Tstg Thermal Impedance Characteristics  Channel to case thermal impedance ch-c: 0.781C/W Preliminary Datasheet R07DS0335EJ0200 Rev.2.00 Dec 19, 2011 D 1. Gate 2. Drain 3. Source 4. Drain S Value 40 +20 / –5 160 640 160 640 70 653 192 175 –55 to +150 (Ta = 25C) Unit V V A A A A A mJ W C C R07DS0335EJ0200 Rev.2.00 Dec 19, 2011 Page 1 of 6 RJK0406JPE Electrical Characteristics Item Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on ...