RJK0323JPD

RJK0323JPD Silicon N Channel MOS FET High Speed Power Switching Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 7.0 mΩ typ. Low drive current Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S)) 4 123 1G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Symbol VDSS VGSS ID ID (pulse) Note1 IDR I Note2 AP E Note2 AR Pch Note3 Tch Note4 Tstg Thermal Impedance Characteristics Channel to case thermal impedance θch-c: 3.125°C/W Preliminary Datasheet R07DS0334EJ0100 Rev.1.00 Apr 18, 2011 2, 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 Value 30 ±20 30 120 30 30 90 40 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C °C R07DS0334EJ0100 Rev.1.00 Apr 18, 2011 Page 1 of 6 RJK0323JPD Electrical Characteristics Item Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test...