RTGN14BAP

〈SMALL-SIGNAL TRANSISTOR〉 RTGN14BAP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN14BAP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R2=10kΩ） ● High collector current IC=1A ● Built-in zener diode between collector and base APPLICATION Motor driver circuit OUTLINE DRAWING 4.6 MAX 1.6 Unit：mm 1.5 0.8 MIN 2.5 4.2 MAX E CB 0.53 MAX 1.5 3.0 0.48 MAX 0.4 MARKING EQUIVALENT CIRCUIT C B R1 R2 E TERMINAL CONNECTOR Ｅ: EMITTER Ｃ: COLLECTOR Ｂ: BASE JEDEC : MARKING A part of EIAJ standard NG The last number Marking month of fisical year Running No. MAXIMUM RATING（Ta=25℃） SYMBOL PARAMETER VCBO VEBO VCEO IC ICM PC Tj Tstg Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current (DC) Collector current (pulse) Collector dissipation Junction temperature Storage temperature RATING 60±10 10 60±10 1 2 500 ＋150 -55～＋150 UNIT V V V A A mW ℃ ℃ ISAHAYA ELECTRONICS CORPORATION 〈SMALL-SIGNAL TRANSISTOR〉 RTGN14BAP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Parameter ICBO VIL hFE1 hFE2 hFE3 VCE(sat) R２ Collector cut off current Input voltage (OFF) DC forward current gain DC forward current gain DC forward current gain C to E saturation voltage Emitter – Base resistor Test conditions VCB=40V，IE=0 VCE=5V，IC=100μA VCE=2V，IC=0.1A VCE=2V，IC=0.5A VCE=2V，IC=1A Ic=500mA,IB...