RTBN14BAP1

PRELIMINARY Notice：This is not a final specification Some parametric are subject to change. DESCRIPTION RTBN14BAP1 is a one chip transistor with built-in bias transistor. FEATURE ・Built-in bias resistor （R2=10kΩ） ・High collector current （IC=1A） ・Small package for easy mounting. APPLICATION Switching. EQUAIVALENT CIRCUIT C B R1 R2 E 〈SMALL-SIGNAL TRANSISTOR〉 RTBN14BAP1 TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING UNIT：mm 4.6 MAX 1.6 1.5 0.8 MIN 2.5 4.2 MAX E CB 0.53 MAX 1.5 3.0 0.48 MAX 0.4 マーキング MARKING TERMINAL CONNECTOR E：EMＥI:TエTEミRッタ C：CＣＢO::LベLコEレーCTクスOタR B：BASE JEITA:SC-62 EJJEIAEDJDEEC: CS::CS-O6T2-89 JEDEC：― MAXIMUM RATING（Ta=25℃） SYMBOL PARAMETER VCBO Collector to Base voltage RATING 80 UNIT V MARKING Type Name VEBO Emitter to Base voltage VCEO Collector to Emitter voltage 10 V 60 V NP I C Collector current 1A I CM Peak collector current 2A PCM Collector dissipation(Ta=25℃) 500 mW Tj Junction temperature Tstg Storage temperature ＋150 -55～＋150 ℃ ℃ The last number Marking month of fisical year Running No. ELECTRICAL CHARACTERISTICS（Ta=25℃） SYMBOL PARAMETER TEST CONDITIONS LIMITS MIN TYP MAX UNIT ICBO Collector cut off current VCE=60V，IE=0 ― ― 0.1 μA VCE(sat) Collector to Emitter saturation voltage IB=7mA，IC=0.7A ― ― 0.4 V VI(off) Input off voltage VCE=5V，IC=100μA 0.3 ― ― V ｈＦＥ1 DC forward current gain1 VCE=2V，IC=0.1A 200 ― ― ― ｈＦＥ2 DC forward current gain2 VCE=...