RT3TDDM

PRELIMINARY RT3TDDM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3TBBM is compound transistor built with RT1N237 chip and RT1P237 chip in SC-88 package. OUTLINE DRAWING Unit：mm FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit ⑥ RTr1 ⑤④ R1 R2 R2 R1 ①② RTr2 ③ TERMINAL CONNECTOR ①：EMITTER1 ②：BASE1 ③：COLLECTOR2 ④：EMITTER2 ⑤：BASE2 ⑥:COLLECTOR1 JEITA：SC-88 MAXIMUM RATING (Ta=25℃) (RTr1_NPN, RTr2_PNP) SYMBOL PARAMETER RATING VCBO Collector to Base voltage 50 VEBO Emitter to Base voltage 6 VCEO Collector to Emitter voltage 50 VIN Input voltage 12 IC Collector current 100 ICM Peak Collector current 200 PC Collector dissipation（Total, Ta=25℃） 150 Tj Junction temperature ＋150 Tstg Storage temperature -55～＋150 ※PNP built in transistor of ”－”sign is abbreviation. UNIT V V V V mA mA mW ℃ ℃ MARKING ⑥⑤④ .T D D ①②③ ISAHAYA ELECTRONICS CORPORATION PRELIMINARY RT3TDDM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) (RTr1_NPN, RTr2_PNP) Symbol Parameter Test conditions V(BR)CEO ICBO hFE VCE(sat) VI(ON) VI(OFF) R1 R2/R1 fT Collector to Emitter break down voltage Collector cut off current DC forward current gain Collector to Emitter saturation voltage Input on voltage Input off voltage Input ...