PRELIMINARY
RT3TTM
Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type
DESCRIPTION
RT3...
PRELIMINARY
RT3TTM
Composite
Transistor With Resistor For Switching Application Silicon Epitaxial Type
DESCRIPTION
RT3TTTM is a composite
transistor built with RT1N250 chip and RT1P250 chip in SC-88 package.
FEATURE
Silicon epitaxial type Each
transistor elements are independent. Mini package for easy mounting
APPLICATION
Inverted circuit, switching circuit, interface circuit, driver circuit
2.0 0.65 0.65
OUTLINE DRAWING
2.1 1.25 ①
②
③
⑥ ⑤ ④
Unit:mm
0.13 0.2
※
PNP built in
transistor of ”-”sign is abbreviation.
0.9 0.65 0~0.1
⑥ RTr1
⑤ R1
④
RTr2
R1
①②
③
TERMINAL CONNECTOR ①:EMITTER1 ②:BASE1 ③:COLLECTOR2 ④:EMITTER2 ⑤:BASE2 ⑥:COLLECTOR1
JEITA:SC-88
MAXIMUM RATING (Ta=25℃)
SYMBOL VCBO VEBO VCEO IC ICM PC Tj Tstg
PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Total, Ta=25℃) Junction temperature Storage temperature
RATING 50 6 50 100 200 150
+150 -55~+150
UNIT V V V mA mA
mW ℃
℃
MARKING
654
.T T T
123
ISAHAYA ELECTRONICS CORPORATION
PRELIMINARY
RT3TTTM
Composite
Transistor With Resistor For Switching Application Silicon Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Symbol
Parameter
Test conditions
V(BR)CEO ICBO hFE VCE(sat) R1
fT
Collector to Emitter break down voltage Collector cut off current DC forward current gain Collector to Emitter saturation voltage Input resistor
Gain band width product
IC=100μA,RBE=∞ VCB =50V,IE=0 VCE=5V,IC=1mA IC=0...