RT3TSSM

PRELIMINARY RT3TSSM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3TSSM is a composite transistor built with RT1N150 chip and RT1P150 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit 2.0 0.65 0.65 OUTLINE DRAWING 2.1 1.25 ① ② ③ ⑥ ⑤ ④ Unit：mm 0.13 0.2 ※PNP built in transistor of ”－”sign is abbreviation. 0.9 0.65 0～0.1 ⑥ RTr1 ⑤ R1 ④ RTr2 R1 ①② ③ TERMINAL CONNECTOR ①：EMITTER1 ②：BASE1 ③：COLLECTOR2 ④：EMITTER2 ⑤：BASE2 ⑥:COLLECTOR1 JEITA：SC-88 MAXIMUM RATING (Ta=25℃) SYMBOL VCBO VEBO VCEO IC ICM PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation（Total, Ta=25℃） Junction temperature Storage temperature RATING 50 6 50 100 200 150 ＋150 -55～＋150 UNIT V V V mA mA mW ℃ ℃ MARKING 654 .T S S １23 ISAHAYA ELECTRONICS CORPORATION PRELIMINARY RT3TSSM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol Parameter Test conditions V(BR)CEO ICBO hFE VCE(sat) R1 fT Collector to Emitter break down voltage Collector cut off current DC forward current gain Collector to Emitter saturation voltage Input resistor Gain band width product IC=100μA,RBE=∞ VCB =50V,IE=0 VCE=5V,IC=1mA IC=...