RT3T1CU

RT3T1CU Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3T1CU is a composite transistor built with RT1N141 chip and RT1P136 chip in USM6F package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit OUTLINE DRAWING 1.6 ±0.05 1pin ﾏｰｸ 1.2 ±0.05 (0.5) 6 1.6 ±0.05 0.5 1. 0 0.5 1 2 3 (0.95) (0.5) 5 (Φ0.1 ～0.2) 4 Unit：mm 0.2 ±0.05 ※PNP built in transistor of ”－”sign is abbreviation. 0.5 ±0.05 0.12 ±0.05 ⑥⑤④ RTr1 R1 R2 R2 R1 ①② RTr2 ③ TERMINAL CONNECTOR ①：EMITTER1 ②：BASE1 ③：COLLECTOR2 ④：EMITTER2 ⑤：BASE2 ⑥:COLLECTOR1 JEITA：－ ISAHAYA：USM6F MAXIMUM RATING (Ta=25℃) SYMBOL VCBO VEBO VCEO IC ICM PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Tr1 Tr2 Collector to Emitter voltage Collector current Peak Collector current Collector dissipation（Total, Ta=25℃） Junction temperature Storage temperature RATING 50 10 6 50 100 200 125 ＋150 -55～＋150 UNIT V V V V mA mA mW ℃ ℃ MARKING 654 1C １23 ISAHAYA ELECTRONICS CORPORATION RT3T1CU Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol V(BR)CEO ICBO hFE VCE(sat) VI(ON) VI(OFF) R1 R2/R1 fT Parameter Collector to Emitter break down voltage Collector cut off current DC forward current gain Collector to Emitter saturation voltage Inp...