RT3PDDM

0.13 0.24 DESCRIPTION RT3PDDM is composite transistor built with two RT1P237 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circuit, Driver circuit 2.0 0.65 0.65 RT3PDDM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING 2.1 1.25 ① ② ③ ⑥ ⑤ ④ Unit：mm 0.9 0.7 0～0.1 ⑥⑤④ R1 R2 RTr1 RTr2 R2 R1 ① ②③ ①：EMITTER1 ②：BASE1 ③：COLLECTOR2 ④：EMITTER2 ⑤：BASE2 ⑥：COLLECTOR1 JEITA：SC-88 JEDEC：－ MAXIMUM RATING(Ta=25℃)(RTr1, RTr2 COMMON) SYMBOL VCBO VEBO VCEO VIN IC ICM PT Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Input voltage Collector current Peak Collector current Collector dissipation（Total） Junction temperature Storage temperature RATING -50 -6 -50 -12 -100 -200 150 ＋150 -55～＋150 UNIT V V V V mA mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃)(RTr1, RTr2 COMMON) SYMBOL PARAMETER TEST CONDITIONS V(BR)CEO ICBO IEBO hFE VCE(sat) VI(ON) VI(OFF) R1 R2/R1 fT Collector to Emitter break down voltage Collector cut off current Emitter cut off current DC forward current gain Collector to Emitter saturation voltage Input on voltage Input off voltage Input resistor Resistor ratio Gain band width product I C=-100µA，RBE=∞ VCB=-50V，I E =0 VEB=-5V，I C =0 VCE=-5V，I C =-10mA I C =-10mA，I B =-0.5mA VCE=-0.2V，I C =-5mA VCE=-5V，I C =-100µA － － VCE=-6...