RT3C99M
Composite Transistor For Muting Application Silicon Npn Epitaxial Type
DESCRIPTION
RT3C99M is a composite trans...
RT3C99M
Composite
Transistor For Muting Application Silicon
Npn Epitaxial Type
DESCRIPTION
RT3C99M is a composite
transistor built with two 2SC5938A chips in SC-88 package.
FEATURE
Silicon
NPN epitaxial type Each
transistor elements are independent. Mini package for easy mounting
APPLICATION
muting circuit、switching circuit
2.0 0.65 0.65
OUTLINE DRAWING
2.1 1.25 ①
②
③
⑥ ⑤ ④
Unit:mm
0.13 0.2
0.9 0.65 0~0.1
TERMINAL CONNECTOR ①:EMITTER1 Tr1 ②:BASE1 ③:COLLECTOR2 Tr2 ④:EMITTER2 ⑤:BASE2 ⑥:COLLECTOR1
JEITA:SC-88
MAXIMUM RATING (Ta=25℃)
SYMBOL VCBO VEBO VCEO IC
PC(Total) Tj Tstg
PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature
RATING 50 40 20 200 150
+125 -55~+125
UNIT V V V mA
mW ℃
℃
MARKING
6 54
.C99
123
ISAHAYA ELECTRONICS CORPORATION
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Symbol
Parameter
Test conditions
ICBO
Collector cut off current
IEBO
Emitter cut off current
hFE*
DC forward current gain
VCE(sat)
Collector to Emitter saturation voltage
fT Gain band width product
Cob Collector output capacitance
Ron Output On-resistance
* : It shows hFE classification in right table.
VCB =50V,IE=0 VEB=40V,IC=0 VCE=2V,IC=4mA IC=30mA,IB=3mA VCE=6V,IE=-4mA VCB=10V,IE=0,f=1MHZ IB=5mA, f=1MHz
RT3C99M
Composite
Transistor For Muting Application Silicon
Npn Epitaxial Type
Limits
Unit
Min Typ Max
- - 0.1 μA
- - 0.1 μA
200
-
1200
-
- 3...