RT3AMMM

PRELIMINARY RT3AMMM Composite Transistor For Low Frequency Amplify Application Silicon Pnp Epitaxial Type DESCRIPTION RT3AMMM is a composite transistor built with two 2SA1235A chips in SC-88 package. FEATURE Silicon pnp epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION For low frequency amplify application 2.0 0.65 0.65 OUTLINE DRAWING 2.1 1.25 ① ② ③ ⑥ ⑤ ④ Unit：mm 0.13 0.2 0.9 0.65 0～0.1 TERMINAL CONNECTOR ①：EMITTER1 Tr1 ②：BASE1 ③：COLLECTOR2 Tr2 ④：EMITTER2 ⑤：BASE2 ⑥:COLLECTOR1 JEITA：SC-88 MAXIMUM RATING (Ta=25℃) SYMBOL VCBO VEBO VCEO IC PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation（Total,Ta=25℃） Junction temperature Storage temperature RATING -60 -6 -50 -200 150 ＋125 -55～＋125 UNIT V V V mA mW ℃ ℃ MARKING 6 54 .AMM １23 ISAHAYA ELECTRONICS CORPORATION PRELIMINARY RT3AMMM Composite Transistor For Low Frequency Amplify Application Silicon Pnp Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol Parameter V(BR)CEO ICBO IEBO hFE* hFE VCE(sat) fT Cob NF Collector to Emitter break down voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain Collector to Emitter saturation voltage Gain band width product Collector output capacitance Noise figure * : It shows hFE classification in right table. Test conditions IC=100μA,RBE=∞ VCB =-60V,IE=0 VEB=-6V,IC=0 VCE=-6V,IC=-1m...