Features
Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching loss...
Features
Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94V-0
Mechanical Data
Case:JEDEC DO--27,molded plastic Terminals: Axial lead ,solderable per
MIL- STD-750,Method 2026 Polarity: Color band denotes cathode Weight: 0.041ounces,1.15 grams Mounting position: Any
SB520-SB5A0
Schottky Barrier Rectifiers VOLTAGE RANGE: 20 --- 100 V
CURRENT: 5.0A DO - 27
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SB520 SB530 SB540 SB550 SB560 SB570 SB580 SB590 SB5A0 UNITS
Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current
9.5mm lead length, (see fig.1) Peak forw ard surge current
8.3ms single half-sine-w ave superimposed on rated load @TJ=125 Maximum instantaneous forw ard voltage
@ 5.0A (Note 1)
VRRM VRMS VDC
IF(AV)
20 30 40 14 21 28 20 30 40
IFSM
VF 0.55
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=100
IR
Typical junction capacitance (Note2)
CJ
Typical thermal resistance (Note3)
RθJA
Operating junction temperature range
TJ
Storage temperature range
NOTE: 1. Pulse test:...