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SCD34MH Dataheets PDF



Part Number SCD34MH
Manufacturers Zowie Technology
Logo Zowie Technology
Description Schottky Barrier Diode
Datasheet SCD34MH DatasheetSCD34MH Datasheet (PDF)

ZOWIE Schottky Barrier Diode SCD34MH FEATURES * Halogen-free type * Compliance to RoHS product * Lead less chip form, no lead damage * Low power loss, High efficiency * High current capability, low VF * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 OUTLINE DIMENSIONS Case : 2010 4.5 ± 0.1 0.50 2.20 ± 0.1 APPLICATION * Switching mode power supply applications * Portable equipment battery applications * High frequency rectification * DC / DC Converter * Telec.

  SCD34MH   SCD34MH



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ZOWIE Schottky Barrier Diode SCD34MH FEATURES * Halogen-free type * Compliance to RoHS product * Lead less chip form, no lead damage * Low power loss, High efficiency * High current capability, low VF * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 OUTLINE DIMENSIONS Case : 2010 4.5 ± 0.1 0.50 2.20 ± 0.1 APPLICATION * Switching mode power supply applications * Portable equipment battery applications * High frequency rectification * DC / DC Converter * Telecommunication 0.96-+ 0.2 0.1 0.95 ± 0.2 0.95 ± 0.2 (40V / 3.0A) Unit : mm Mounting Pad Layout 2.60 MAX. 1.47 MIN. 1.27 MIN. 5.14 REF. MECHANICAL DATA Case : Packed with FRP substrate and epoxy underfilled Terminals : Pure Tin plated (Lead-Free), solderable per MIL-STD-750, Method 2026. Polarity : Laser Cathode band marking Weight : 0.02 gram PACKING * 3,000 pieces per 7" (178mm ± 2mm) reel * 4 reels per box * 6 boxes per carton Absolute Maximum Ratings (Ta = 25 oC) Equivalent : SMA DO-214AC MARKING SCD 34M. ITEM Repetitive peak reverse voltage Average forward current Peak forward surge current Operating junction temperature Range Storage temperature Range Symbol Conditions VRRM IF(AV) IFSM Tj TSTG 8.3ms single half sine-wave Rating 40 3.0 80 -55 to +150 -55 to +150 Unit V A A oC oC Electrical characteristics (Ta = 25 oC) ITEM Symbol Conditions Forward voltage (NOTE 1) VF IF = 3.0A Repetitive peak reverse current Junction capacitance IRRM VR = Max. VRRM Cj VR = 4V, f = 1.0 MHz Ta = 25 oC Ta = 125 oC Thermal resistance Rth(JA) Rth(JC) NOTES : (1) Pulse test width PW=300usec , 1% duty cycle. (2) Mounted on P.C. board with recommended copper pad areas. Junction to ambient (NOTE 2) Junction to case (NOTE 2) REV. 3 Min. Typ. Max. Unit - 0.50 0.55 V - 0.01 0.10 mA - 3.8 10 - 115 - pF - 128 - oC/W - 18 - oC/W 2014/01 ZOWIE SCD34MH AVERAGE FORWARD RECTIFIED CURRENT, AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 4 3 2 1 0 0 50 70 90 110 130 150 170 CASE TEMPERATURE, oC PEAK FORWARD SURGE CURRENT, AMPERES 80 70 60 50 40 30 20 10 0 1 (40V / 3.0A) FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 8.3ms Single Half Sine-Wave 10 NUMBER OF CYCLES AT 60Hz 100 IINSTANTANEOUS FORWARD CURRENT, AMPERES FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 10 TJ = 150 TJ = 125 TJ = 100 TJ = 25 1 0.1 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 INSTANTANEOUS FORWARD VOLTAGE, (V) INSTANTANEOUS REVERSE LEAKAGE CURRENT, MILLIAMPERES FIG.4 - TYPICAL REVERSE CHARACTERISTICS 100 10 1 TJ = 125oC TJ = 100oC 0.1 TJ = 150oC 0.01 0.001 TJ = 25oC 0.0001 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE 400 TJ = 25oC f=1.0MHz Vsig=50mVP-P 100 JUNCTION CAPACITANCE, pF REV. 3 10 .1 1.0 10 REVERSE VOLTAGE, VOLTS 100 2014/01 .


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