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CDBFR0230R-HF

Comchip Technology

SMD Schottky Barrier Diode

SMD Schottky Barrier Diode CDBFR0230R-HF Io = 200 mA VR = 30 Volts RoHS Device Halogen Free Features -Low reverse curren...


Comchip Technology

CDBFR0230R-HF

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Description
SMD Schottky Barrier Diode CDBFR0230R-HF Io = 200 mA VR = 30 Volts RoHS Device Halogen Free Features -Low reverse current. -Designed for mounting on small surface. -Extremely thin / leadless package. -Majority carrier conduction. Mechanical data -Case: 1005/SOD-323F standard package, molded plastic. -Terminals: Gold plated, solderable per MIL-STD-750,method 2026. -Marking code: cathode band & BB -Mounting position: Any -Weight: 0.006 gram(approx.). 1005/SOD-323F 0.102(2.60) 0.095(2.40) 0.051(1.30) 0.043(1.10) 0.020(0.50) Typ. 0.035(0.90) 0.027(0.70) 0.040(1.00) Typ. Dimensions in inches and (millimeter) Maximum Rating (at TA=25OC unless otherwise noted) Parameter Repetitive peak reverse voltage Reverse voltage Average forward current Conditions Symbol Min Typ Max Unit VRRM 35 V VR 30 V IO 200 mA Forward current,surge peak 8.3ms single half sine-wave superimposed on rate load(JEDEC method) IFSM 1A Storage temperature Junction temperature TSTG Tj -40 +125 +125 OC OC Electrical Characteristics (at TA=25OC unless otherwise noted) Parameter Forward voltage Reverse current Conditions IF = 200 mA VR = 10 V Symbol Min Typ Max Unit VF 0.6 V IR 1 uA QW-G1060 Comchip Technology CO., LTD. REV:A Page 1 SMD Schottky Barrier Diode Forward current (mA ) RATING AND CHARACTERISTIC CURVES (CDBFR0230R-HF) Fig. 1 - Forward characteristics 1000 100 10 O C O C 125 O C 75 1 O C 25 -25 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Forward voltage (V) Reverse curre...




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