RQJ0602EGDQS
Silicon P Channel MOS FET Power Switching
Features
Low on-resistance RDS(on) = 485 mΩ typ (VGS = –10 V, ID = –0.75 A)
Low drive current High speed switching 4.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A (Package name: UPAK R )
1 2 3
4
Note: Marking is “EG”.
REJ03G1268-0300 Rev.3.00
Jun 05, 2006
2, 4 D
1. Gate 1 G 2. Drain
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