RQJ0601DGDQS
Silicon P Channel MOS FET Power Switching
Features
Low on-resistance RDS(on) = 124 mΩ typ (VGS = –10 V, ID = –1.4 A)
Low drive current High speed switching 4.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A (Package name: UPAK R )
1 2 3
4
Note: Marking is “DG”.
REJ03G1266-0300 Rev.3.00
Jun 05, 2006
2, 4 D
1. Gate 1 G 2. Drain
3...
