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RQJ0305EQDQS

Renesas
Part Number RQJ0305EQDQS
Manufacturer Renesas
Description Silicon P-Channel MOS FET
Published May 14, 2016
Detailed Description RQJ0305EQDQS Silicon P Channel MOS FET Power Switching Features • Low gate drive VDSS : –30 V and 2.5 V gate drive • Lo...
Datasheet PDF File RQJ0305EQDQS PDF File

RQJ0305EQDQS
RQJ0305EQDQS

Overview
RQJ0305EQDQS Silicon P Channel MOS FET Power Switching Features • Low gate drive VDSS : –30 V and 2.
5 V gate drive • Low drive current • High speed switching • Small traditional power package (UPAK) Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 1G Notes: Marking is "EQ".
Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Thermal resistance VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Rth(ch-a) Note2 Channel temperature Tch Storage temperature Tstg Notes: 1.
PW ≤ 10 µs, Duty cycle ≤ 1% 2.
When using the glass epoxy board (FR-4 ...


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