MMBT2907A

PNP General Purpose Transistors MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC MMBT2907 MMBT2907A COLLECTOR 3 3 1 BASE 2 EMITTER 1 2 SOT-23 2907 -40 2907A -60 -60 -5.0 -600 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristics Total Device Dissipation FR-5 Board (1) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature DEVICE MARKING MMBT2907=M2B; MMBT2907A=2F ELECTRICAL CHARACTERISTICS Characteristics Symbol PD R qJA PD R qJA TJ,Tstg Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/ C C/W mW mW/ C C/W C Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC= -10 mAdc, IB=0) MMBT2907 MMBT2907A V(BR)CEO -40 -60 - Vdc Collector-Base Breakdown Voltage (IC= -10 µAdc, IE=0) V(BR)CBO -60 - Vdc Emitter-Base Breakdown Voltage (IE= -10 µAdc, IC=0) V(BR)EBO -5.0 - Vdc Collector Cutoff Current (VCE= -30 Vdc, VEB (0ff )= -0.5Vdc) ICEX - -50 nAdc Collector Cutoff Current (VCB= -50 Vdc, IE=0) (VCB= -50Vdc, IE=0, TA=125 C) Base Cutoff Current (VCE= -30Vdc, VEB(off )= -0.5Vdc) MMBT2907 MMBT22907A MMBT2907 MMBT2907A MMBT2907A ICBO IB - -0.020 - -0.010 - -20 nAdc - -10 - -50 nAdc 1.FR-5=1.0 x 0.75 x 0.062 in 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina WEITRON ht...