MMBT2907A
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE 60 Volts
POWER 225 mW
FEATURES
PNP epitaxial silicon, pla...
MMBT2907A
PNP GENERAL PURPOSE SWITCHING
TRANSISTOR
VOLTAGE 60 Volts
POWER 225 mW
FEATURES
PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -60V Collector current IC = -600mA Pb free product are available : 99% Sn above can meet RoHS environment substance directive request
SOT- 23
.056(1.40) .047(1.20)
.119(3.00) .110(2.80)
.083(2.10) .066(1.70)
MECHANICAL DATA
Case: SOT-23 Terminals : Solderable per MIL-STD-750,Method 2026 Approx Weight: 0.008 grams Device Marking : M7A
.006(.15)MAX
.020(.50) .013(.35)
.044(1.10) .035(0.90)
.007(.20)MIN .103(2.60) .086(2.20)
Unit: inch (mm)
.006(.15) .002(.05)
ABSOLUTE MAXIMUM RATINGS
Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous
THERMALCHATACTERISTICS
Symbol VC E O VC B O VE B O
IC
Parameter Max Power Dissipation (Note 1) Storage Temperature Junction Temperaure Thermal Resistance, Junction to Ambient
Note 1 :
Transistor mouted on FR-5 board 1.0 x 0.75 x 0.062 in.
Symbol
PTO T TS TG
TJ RΘ JA
REV.0-JUN.1.2005
Value -60 -60 -5.0 -600
Units V V V mA
Value 225 -55 to 150 -55 to 150 556
Units mW OC OC OC / W
PAGE . 1
MMBT2907A
ELECTRICAL CHARACTERISTICS (T =25OC, unless otherwise noted) J
Parameter
Symbol
Test Condition
Min. Typ. Max. Units
Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage...