MMBT2907 / MMBT2907A
PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications.
The transistor...
MMBT2907 / MMBT2907A
PNP Silicon Epitaxial Planar
Transistor for switching and AF amplifier applications.
The
transistor is subdivided into one group according to its DC current gain. As complementary type the
NPN transistor MMBT2222 and MMBT2222A are recommended.
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol
-VCBO -VCEO -VEBO
-IC Ptot Tj TS
Value MMBT2907 MMBT2907A
60 40 60
5 600 200 150 -55 to +150
Unit
V V V mA mW OC OC
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/12/2005
MMBT2907 / MMBT2907A
Characteristics at Ta = 25 OC Parameter
DC Current Gain at -IC = 0.1 mA, -VCE = 10 V
at -IC = 1 mA, -VCE = 10 V
at -IC = 10 mA, -VCE = 10 V
at -IC = 150 mA, -VCE = 10 V at -IC = 500 mA, -VCE = 10 V
Collector Cutoff Current at -VCB = 50 V
Collector Base Breakdown Voltage at -IC = 10 µA
Collector Emitter Breakdown Voltage at -IC = 10 mA
Emitter Base Breakdown Voltage at -IE = 10 µA
Collector Saturation Voltage at -IC = 150 mA, -IB = 15 mA at -IC = 500 mA, -IB = 50 mA
Base Saturation Voltage at -IC = 150 mA, -IB = 15 mA at -IC = 500 mA, -IB = 50 mA
Gain Bandwidth Product at -IC = 50 mA , -VCE = 20 V, f = 100 MHz
Collector Output Capacitance at -VCB = 10 V, f = 1 MHz
Input Capacitanc...