KTD1302

SMD Type NPN Transistors KTD1302 Transistors ■ Features ● Small Flat Package ● Audio Muting Application ● High Emitter-Base Voltage 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC RθJA TJ Tstg Rating 25 20 12 300 500 250 150 -55 to 150 Unit V mA mW ℃/W ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Collector output capacitance Transition frequency Symbol Test Conditions VCBO Ic= 100 μA， IE= 0 VCEO Ic= 1 mA， IB= 0 VEBO IE= 100μA， IC= 0 ICBO VCB= 25 V , IE= 0 IEBO VEB= 12V , IC=0 VCE(sat) IC=100 mA, IB=10mA VBE(sat) IC=100 mA, IB=10mA VCE= 2V, IC= 4mA (FOR) hFE VCE= 2V, IC= 4mA (REV) Cob VCB= 10V, IE= 0,f=1MHz fT VCE= 10V, IC= 1mA , f=100MHz Min Typ Max Unit 25 20 V 12 0.1 uA 0.1 0.25 V 1 200 800 20 10 pF 60 MHz ■ Marking Marking 1302 www.kexin.com.cn 1 ...