Document
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NPN Transistors KST9018
■ FFeeatures
● High current gain bandwidth product. ● power dissipation.(PC=200mW)
+0.22.8 -0.1
SOT-23-3
2.9 +0.2 -0.1
0.4 +0.1 -0.1
3
12 0.95 +0.1
-0.1
1.9 +0.1 -0.2
+0.21.1 -0.1
+0.21.6 -0.1
0.55 0.4
Transistors IC
Unit: mm
0.15 +0.02 -0.02
1. Base 2. Emitter 3. Collector
0-0.1 +0.10.68
-0.1
■ Absolute Maximum Ratings Ta = 25 ℃
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current to Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Rating 30 15 5 50 200 150
-55 to 150
Unit V V V mA
mW
℃ ℃
■ Electrical Characteristics Ta = 25
Parameter Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cut to off current Emitter cut to off current DC current gain Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency
Symbol
Testconditions
V(BR)CBO IC= 100 uA, IE=0
V(BR)CEO IC= 1mA, IB=0
V(BR)EBO IE=100 uA, IC=0
ICBO VCB=12V, IE=0
IEBO VEB= 3V, IC=0
hFE VCE=5V, IC= 1mA
VCE(sat) IC=10mA, IB= 1mA
VBE(sat) IC=10mA, IB= 1mA
fT VCE=5V, IC= 5mA,f=400MHz
■ Classification of hfe
Type
KST9018-L
KST9018-H
Range
70-105
105-190
Marking
J8
Min Typ Max Unit 30 V 15 V 5V
0.05 uA 0.1 uA 70 190
0.5 V 1.4 V 600 MHz
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