H8050S

Shantou Huashan Electronic Devices Co.,Ltd. NPN SILICON TRANSISTOR H8050S █ APPLICATIONS Audio Frequency Amplifier. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg——Storage Temperature………………………… -55~150℃ Tj——Juncttion Temperature…………………………………150℃ PC——Collector Dissipation…………………………………625W VCBO——Collector-Base Voltage………………………………40V VCEO——Collector-Emitter Voltage……………………………20V VEBO——Emitter-Base Voltage………………………………5V IC——Collector Current………………………………………500mA TO-92 1―Emitter，E 2―Base，B 3―Collector，C █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics ICBO IEBO HFE（1） HFE（2） VCE(sat） VBE(sat) VBE(on) Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage Base-Emitter On Voltage BVCBO BVCEO BVEBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage █ hFE Classification Min Typ Max Unit Test Conditions 0.1 μA VCB=25V, IE=0 0.1 μA VEB=3V, IC=0 85 500 VCE=1V, IC=50mA 40 VCE=1V, IC=500mA 0.6 V IC=500mA, IB=50mA 1.2 V IC=500mA,IB=50mA 0.6 0.73 V VCE=1V, IC=10mA 40 V IC=100μA，IE=0 20 V IC=2mA，IB=0 5 V IE=100μA，IC=0 B 85—160 C 120—200 D 160—300 E 270—500 Shantou Huashan Electronic Devices Co.,Ltd. NPN SILICON TRANSISTOR H8050S ...