Document
Green
DMPH6050SK3
60V 175°C P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -60V
RDS(ON) max
50mΩ @ VGS = -10V 70mΩ @ VGS = -4.5V
ID max TC = +25°C
-23.6A -20A
Features
Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
Low Qg – Minimizes Switching Loss Low RDS(ON) – Minimizes On State Loss Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate
Datasheet (DMPH6050SK3Q)
Description and Applications
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Load Switch DC-DC Converters Motor Driving
TO252 (DPAK)
Mechanical Data
Case: TO252 (DPAK) Case Material: Molded Plastic, ―Green‖ Molding Compound; UL
Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 Weight: 0.315 grams (Approximate)
D
G
Top View
Pin Out Top View
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number DMPH6050SK3-13
Case TO252 (DPAK)
Packaging 2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
TO252 (DPAK)
H6050S YYWW
= Manufacturer’s Marking H6050S = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 15 = 2015) WW = Week Code (01 to 53)
DMPH6050SK3
Document number: DS37458 Rev. 4 - 2
1 of 7 www.diodes.com
July 2016
© Diodes Incorporated
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = -10V
Steady State
Steady State
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 7) L = 0.1mH
Avalanche Energy (Note 7) L = 0.1mH
TC = +25°C TC = +70°C TA = +25°C TA = +70°C
Symbol VDSS VGSS
ID
ID
IDM IS IAS EAS
DMPH6050SK3
Value
Unit
-60
V
±20
V
-23.6 -19
A
-7.2 -6.0
A
-40
A
-3.8
A
-25
A
31
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range
Steady State Steady State
Symbol PD RJA PD RJA RJC
TJ, TSTG
Value 1.9 80 3.8 39 3
-55 to +175
Unit W
°C/W W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
Symbol Min Typ Max
BVDSS
-60
IDSS
—
IGSS
—
—
—
—
-1
—
±100
VGS(TH)
RDS(ON)
VSD
Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON)
tR tD(OFF)
tF tRR QRR
-1
—
-3
—
—
50
—
—
70
—
-0.7 -1.2
—
1377
—
—
87
—
—
68
—
—
12
—
—
12
—
—
25
—
—
3.8
—
—
4.9
—
—
5.3
—
—
8.6
—
—
49.4
—
—
29.7
—
— 14.2
—
—
7.9
—
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V
VGS = 0V, ID = -250μA
µA VDS = -60V, VGS = 0V
nA .