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DMPH6050SK3 Dataheets PDF



Part Number DMPH6050SK3
Manufacturers Diodes
Logo Diodes
Description 60V P-Channel MOSFET
Datasheet DMPH6050SK3 DatasheetDMPH6050SK3 Datasheet (PDF)

Green DMPH6050SK3 60V 175°C P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -60V RDS(ON) max 50mΩ @ VGS = -10V 70mΩ @ VGS = -4.5V ID max TC = +25°C -23.6A -20A Features  Rated to +175°C – Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application  Low Qg – Minimizes Switching Loss  Low RDS(ON) – Minimizes On State Loss  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green.

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Green DMPH6050SK3 60V 175°C P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -60V RDS(ON) max 50mΩ @ VGS = -10V 70mΩ @ VGS = -4.5V ID max TC = +25°C -23.6A -20A Features  Rated to +175°C – Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application  Low Qg – Minimizes Switching Loss  Low RDS(ON) – Minimizes On State Loss  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  An Automotive-Compliant Part is Available Under Separate Datasheet (DMPH6050SK3Q) Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Load Switch  DC-DC Converters  Motor Driving TO252 (DPAK) Mechanical Data  Case: TO252 (DPAK)  Case Material: Molded Plastic, ―Green‖ Molding Compound; UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.315 grams (Approximate) D G Top View Pin Out Top View S Equivalent Circuit Ordering Information (Note 4) Notes: Part Number DMPH6050SK3-13 Case TO252 (DPAK) Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information TO252 (DPAK) H6050S YYWW = Manufacturer’s Marking H6050S = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 15 = 2015) WW = Week Code (01 to 53) DMPH6050SK3 Document number: DS37458 Rev. 4 - 2 1 of 7 www.diodes.com July 2016 © Diodes Incorporated Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = -10V Steady State Steady State Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH TC = +25°C TC = +70°C TA = +25°C TA = +70°C Symbol VDSS VGSS ID ID IDM IS IAS EAS DMPH6050SK3 Value Unit -60 V ±20 V -23.6 -19 A -7.2 -6.0 A -40 A -3.8 A -25 A 31 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Steady State Steady State Symbol PD RJA PD RJA RJC TJ, TSTG Value 1.9 80 3.8 39 3 -55 to +175 Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Symbol Min Typ Max BVDSS -60 IDSS — IGSS — — — — -1 — ±100 VGS(TH) RDS(ON) VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR -1 — -3 — — 50 — — 70 — -0.7 -1.2 — 1377 — — 87 — — 68 — — 12 — — 12 — — 25 — — 3.8 — — 4.9 — — 5.3 — — 8.6 — — 49.4 — — 29.7 — — 14.2 — — 7.9 — Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. Unit Test Condition V VGS = 0V, ID = -250μA µA VDS = -60V, VGS = 0V nA .


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