Document
NEW PRODUCT
Green DMNH10H028SK3
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 100V
RDS(ON) max 28mΩ @ VGS = 10V
ID max TC = +25°C
55A
Description
This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power management applications.
Applications
Engine Management Systems Body Control Electronics DC-DC Converters
Features
Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
Low RDS(ON) – Minimises Power Losses Low Qg – Minimises Switching Losses Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate
Datasheet (DMNH10H028SK3Q)
Mechanical Data
Case: TO252 Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe
Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate)
Top View
Pin Out Top View
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number DMNH10H028SK3-13
Case TO252
Packaging 2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
H1H28S YYWW
= Manufacturer’s Marking H1H28S = Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 15 = 2015) WW = Week Code (01 to 53)
DMNH10H028SK3
Document number: DS37383 Rev. 3 - 2
1 of 7 www.diodes.com
October 2015
© Diodes Incorporated
DMNH10H028SK3
NEW PRODUCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage Gate-Source Voltage
Characteristic
Continuous Drain Current, VGS = 10V
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 5) Avalanche Current, L = 0.1mH Avalanche Energy, L = 0.1mH
TC = +25°C TC = +100°C
Symbol VDSS VGSS
ID
IDM IS IAS EAS
Value 100 ±20 55 39 58 2.2 29 43
Unit V V
A
A A A mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case Operating and Storage Temperature Range
Steady State t<10s
Steady State t<10s
Symbol PD
RJA PD
RJA RJC TJ, TSTG
Value 2.0 74 25 3.7 40 13 1.2
-55 to +175
Unit W
°C/W W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current, TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 6V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
Symbol Min
BVDSS IDSS IGSS
100 — —
VGS(TH) RDS(ON)
VSD
Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON)
tR tD(OFF)
tF tRR QRR
2.0 — —
— — — — — — — — — — — — — —
Typ
— — —
2.5 20 0.7
2245 173 68 1.9 36 22 7.3 9.2 6.4 5.8 17.8 4.8 35 47
Max
— 1 ±100
3.3 28 1.2
— — — — — — — — — — — — — —
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V VGS = 0V, ID = 250μA µA VDS = 100V, VGS = 0V nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA mΩ VGS = 10V, ID = 20A
V VGS = 0V, IS = 1.0A
pF pF VDS = 50V, VGS = 0V,
f = 1MHz pF Ω VDS = 0V, VGS = 0V, f = 1MHz nC
nC nC VDS = 50V, ID = 20A
nC
ns
ns VGS = 10V, VDS = 50V, ns RG = 3Ω, ID = 20A ns ns IF = 20A, di/dt = 100A/μs nC IF = 20A, di/dt = 100A/μs
DMNH10H028SK3
Document number: DS37383 Rev. 3 - 2
2 of 7 www.diodes.com
October 2015
© Diodes Incorporated
DMNH10H028SK3
NEW PRODUCT
ID, DRAIN CURRENT (A)
30.0 25.