DatasheetsPDF.com

DMNH10H028SK3 Dataheets PDF



Part Number DMNH10H028SK3
Manufacturers Diodes
Logo Diodes
Description N-Channel MOSFET
Datasheet DMNH10H028SK3 DatasheetDMNH10H028SK3 Datasheet (PDF)

NEW PRODUCT Green DMNH10H028SK3 100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(ON) max 28mΩ @ VGS = 10V ID max TC = +25°C 55A Description This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power management applications. Applications  Engine Management Systems  Body Control Electronics  DC-DC Converters Features  Rated to +175°C – Ideal for High Ambient Temperature Environments  100% Unclamped .

  DMNH10H028SK3   DMNH10H028SK3


Document
NEW PRODUCT Green DMNH10H028SK3 100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(ON) max 28mΩ @ VGS = 10V ID max TC = +25°C 55A Description This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power management applications. Applications  Engine Management Systems  Body Control Electronics  DC-DC Converters Features  Rated to +175°C – Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application  Low RDS(ON) – Minimises Power Losses  Low Qg – Minimises Switching Losses  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  An Automotive-Compliant Part is Available Under Separate Datasheet (DMNH10H028SK3Q) Mechanical Data  Case: TO252  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram  Terminals: Finish – Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208  Weight: 0.33 grams (Approximate) Top View Pin Out Top View Equivalent Circuit Ordering Information (Note 4) Notes: Part Number DMNH10H028SK3-13 Case TO252 Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information H1H28S YYWW = Manufacturer’s Marking H1H28S = Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 15 = 2015) WW = Week Code (01 to 53) DMNH10H028SK3 Document number: DS37383 Rev. 3 - 2 1 of 7 www.diodes.com October 2015 © Diodes Incorporated DMNH10H028SK3 NEW PRODUCT Maximum Ratings (@TA = +25°C, unless otherwise specified.) Drain-Source Voltage Gate-Source Voltage Characteristic Continuous Drain Current, VGS = 10V Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 5) Avalanche Current, L = 0.1mH Avalanche Energy, L = 0.1mH TC = +25°C TC = +100°C Symbol VDSS VGSS ID IDM IS IAS EAS Value 100 ±20 55 39 58 2.2 29 43 Unit V V A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Total Power Dissipation (Note 5) Characteristic Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case Operating and Storage Temperature Range Steady State t<10s Steady State t<10s Symbol PD RJA PD RJA RJC TJ, TSTG Value 2.0 74 25 3.7 40 13 1.2 -55 to +175 Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current, TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 6V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Symbol Min BVDSS IDSS IGSS 100 — — VGS(TH) RDS(ON) VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR 2.0 — — — — — — — — — — — — — — — — Typ — — — 2.5 20 0.7 2245 173 68 1.9 36 22 7.3 9.2 6.4 5.8 17.8 4.8 35 47 Max — 1 ±100 3.3 28 1.2 — — — — — — — — — — — — — — Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. Unit Test Condition V VGS = 0V, ID = 250μA µA VDS = 100V, VGS = 0V nA VGS = ±20V, VDS = 0V V VDS = VGS, ID = 250μA mΩ VGS = 10V, ID = 20A V VGS = 0V, IS = 1.0A pF pF VDS = 50V, VGS = 0V, f = 1MHz pF Ω VDS = 0V, VGS = 0V, f = 1MHz nC nC nC VDS = 50V, ID = 20A nC ns ns VGS = 10V, VDS = 50V, ns RG = 3Ω, ID = 20A ns ns IF = 20A, di/dt = 100A/μs nC IF = 20A, di/dt = 100A/μs DMNH10H028SK3 Document number: DS37383 Rev. 3 - 2 2 of 7 www.diodes.com October 2015 © Diodes Incorporated DMNH10H028SK3 NEW PRODUCT ID, DRAIN CURRENT (A) 30.0 25.


DMNH10H028SK3Q DMNH10H028SK3 DMNH3010LK3


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)